Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets
Identifieur interne : 012467 ( Main/Repository ); précédent : 012466; suivant : 012468Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets
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Abstract
Recent experiments indicate that the shape of self-organized InAs quantum dots grown on GaAs [001] is an elongated pyramid with bounding facets corresponding to a family of four {136} planes. This structure, which possesses C2v symmetry, is quite different from square-base pyramidal or lens geometries, which have been assumed in previous electronic structure calculations for this system. In this paper, we consider theoretically the influence of the {136} shape on the electronic structure and optical properties of the quantum dots. We present a valence force-field calculation of the inhomogeneous strain and incorporate the results into an eight band kp electronic structure calculation. The size dependence of the electronic structure is calculated and compared to experimental photoluminescence spectra. The effects of perturbations on the {136} shape are also considered. Calculations based on the {136} shape give good agreement with the observed level structure and optical polarization properties of self-organized InAs/GaAs quantum dots.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets</title><author><name sortKey="Yang, Weidong" uniqKey="Yang W">Weidong Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, Golden</wicri:cityArea></affiliation></author><author><name sortKey="Lee, Hao" uniqKey="Lee H">Hao Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Johnson, Thomas J" uniqKey="Johnson T">Thomas J. Johnson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Sercel, Peter C" uniqKey="Sercel P">Peter C. Sercel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Norman, A G" uniqKey="Norman A">A. G. Norman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0069337</idno><date when="2000-01-15">2000-01-15</date><idno type="stanalyst">PASCAL 00-0069337 AIP</idno><idno type="RBID">Pascal:00-0069337</idno><idno type="wicri:Area/Main/Corpus">013C33</idno><idno type="wicri:Area/Main/Repository">012467</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal structure</term><term>Electronic structure</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor junctions</term><term>Semiconductor quantum dots</term><term>Symmetry</term><term>Theoretical study</term><term>k.p calculations</term><term>self-assembly</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7866F</term><term>7320D</term><term>Etude théorique</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Jonction à semiconducteur</term><term>Structure électronique</term><term>Structure cristalline</term><term>Symétrie</term><term>Photoluminescence</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Calcul k.p</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Recent experiments indicate that the shape of self-organized InAs quantum dots grown on GaAs [001] is an elongated pyramid with bounding facets corresponding to a family of four {136} planes. This structure, which possesses C<sub>2v</sub> symmetry, is quite different from square-base pyramidal or lens geometries, which have been assumed in previous electronic structure calculations for this system. In this paper, we consider theoretically the influence of the {136} shape on the electronic structure and optical properties of the quantum dots. We present a valence force-field calculation of the inhomogeneous strain and incorporate the results into an eight band kp electronic structure calculation. The size dependence of the electronic structure is calculated and compared to experimental photoluminescence spectra. The effects of perturbations on the {136} shape are also considered. Calculations based on the {136} shape give good agreement with the observed level structure and optical polarization properties of self-organized InAs/GaAs quantum dots.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>61</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets</s1></fA08><fA11 i1="01" i2="1"><s1>YANG (Weidong)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (Hao)</s1></fA11><fA11 i1="03" i2="1"><s1>JOHNSON (Thomas J.)</s1></fA11><fA11 i1="04" i2="1"><s1>SERCEL (Peter C.)</s1></fA11><fA11 i1="05" i2="1"><s1>NORMAN (A. G.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>National Renewable Energy Laboratory, Golden, Colorado 80401</s1></fA14><fA20><s1>2784-2793</s1></fA20><fA21><s1>2000-01-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0069337</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Recent experiments indicate that the shape of self-organized InAs quantum dots grown on GaAs [001] is an elongated pyramid with bounding facets corresponding to a family of four {136} planes. This structure, which possesses C<sub>2v</sub> symmetry, is quite different from square-base pyramidal or lens geometries, which have been assumed in previous electronic structure calculations for this system. In this paper, we consider theoretically the influence of the {136} shape on the electronic structure and optical properties of the quantum dots. We present a valence force-field calculation of the inhomogeneous strain and incorporate the results into an eight band kp electronic structure calculation. The size dependence of the electronic structure is calculated and compared to experimental photoluminescence spectra. The effects of perturbations on the {136} shape are also considered. Calculations based on the {136} shape give good agreement with the observed level structure and optical polarization properties of self-organized InAs/GaAs quantum dots.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Jonction à semiconducteur</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor junctions</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Structure électronique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electronic structure</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Structure cristalline</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Crystal structure</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Symétrie</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Symmetry</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>self-assembly</s0><s4>INC</s4></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Calcul k.p</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>k.p calculations</s0></fC03><fN21><s1>045</s1></fN21><fN47 i1="01" i2="1"><s0>0004M000528</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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